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MP6404 2002-12-11 1 toshiba power mos fet module silicon n&p channel mos type (l 2 - -mosv 6 in 1) MP6404 high power high speed switching applications 3-phase motor drive and stepping motor drive applications 4 v gate drive small package by full molding (sip 12 pin) high drain power dissipation (6 devices operation) : p t = 36 w (tc = 25c) low drain-source on resistance: r ds (on) = 120 m ? (typ.) (nch) 160 m ? (typ.) (pch) high forward transfer admittance: |y fs | = 5.0 s (typ.) (nch) 4.0 s (typ.) (pch) low leakage current: i gss = 10 a (max) (v gs = 16 v) i dss = 100 a (max) (v ds = 60 v) enhancement-mode: v th = 0.8 v to 2.0 v (v ds = 10 v, i d = 1 ma) maximum ratings (ta = 25c) rating characteristics symbol nch pch unit drain-source voltage v dss 60 ? 60 v drain-gate voltage (r gs = 20 k ? ) v dgr 60 ? 60 v gate-source voltage v gss 20 20 v dc i d 5 ? 5 drain current pulse i dp 20 ? 20 a drain power dissipation (1 device operation, ta = 25c) p d 2.2 w ta = 25c 4.4 drain power dissipation (6 devices operation) tc = 25c p dt 36 w single pulse avalanche energy (note 1) e as 129 273 mj avalanche current i ar 5 ? 5 a 1 device operation e ar 0.22 repetitive avalanche energy (note 2) 6 device operation e art 0.44 mj channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c note 1: avalanche energy (single pulse) applied condition nch: v dd = 25 v, starting t ch = 25c, l = 7 mh, r g = 25 ? , i ar = 5 a pch: v dd = ? 25 v, starting t ch = 25c, l = 14.84 mh, r g = 25 ? , i ar = ? 5 a note 2: repetitive rating; pulse width limited by maximum channel temperature. this transistor is an electrostatic sensitive device. please handle with caution. industrial applications unit: mm jedec D jeita D toshiba 2-32c1k weight: 3.9 g (typ.)
MP6404 2002-12-11 2 array configuration thermal characteristics characteristics symbol max unit thermal resistance of channel to ambient (6 devices operation, ta = 25c) r th (ch-a) 28.4 c/w thermal resistance of channel to case (6 devices operation, tc = 25c) r th (ch-c) 3.47 c/w maximum lead temperature for soldering purposes (3.2 mm from case for t = 10 s) t l 260 c 5 12 11 6 4 7 10 8 2 3 1 9
MP6404 2002-12-11 3 electrical characteristics (ta = 25c) (nch mos fet) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 16 v, v ds = 0 v D D 10 a drain cut-off current i dss v ds = 60 v, v gs = 0 v D D 100 a drain source breakdown voltage v (br) dss i d = 10 ma, v gs = 0 v 60 D D v gate threshold voltage v th v ds = 10 v, i d = 1 ma 0.8 D 2.0 v v gs = 4 v, i d = 2.5 a D 0.21 0.32 drain-source on resistance r ds (on) v gs = 10 v, i d = 2.5 a D 0.12 0.16 ? forward transfer admittance |y fs | v ds = 10 v, i d = 2.5 a 3.0 5.0 D s input capacitance c iss D 370 D pf reverse transfer capacitance c rss D 60 D pf output capacitance c oss v ds = 10 v, v gs = 0 v, f = 1 mhz D 180 D pf rise time t r D 18 D turn-on time t on D 25 D fall time t f D 55 D switching time turn-off time t off v in : t r , t f < 5 ns, duty 1%, t w = 10 s D 170 D s total gate charge (gate-source plus gate-drain) q g D 12 D nc gate-source charge q gs D 8 D nc gate-drain (?miller?) charge q gd v dd 48 v, v gs = 10 v, i d = 5 a D 4 D nc source-drain diode ratings and characteristics (ta = 25c) characteristics symbol test condition min typ. max unit continuous drain reverse current i dr D D D 5 a pulse drain reverse current i drp D D D 20 a diode forward voltage v dsf i dr = 5 a, v gs = 0 v D D ? 1.7 v reverse recovery time t rr D 70 D ns reverse recovery charge q rr i dr = 5 a, v gs = 0 v di dr /dt = 50 a/s D 0.1 D c 10 v v gs r l = 12 ? v dd 30 v i d = 2.5 a v out 50 ? 0 v
MP6404 2002-12-11 4 electrical characteristics (ta = 25c) (pch mos fet) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 16 v, v ds = 0 v D D 10 a drain cut-off current i dss v ds = ? 60 v, v gs = 0 v D D ? 100 a drain source breakdown voltage v (br) dss i d = ? 10 ma, v gs = 0 v ? 60 D D v gate threshold voltage v th v ds = ? 10 v, i d = ? 1 ma ? 0.8 D ? 2.0 v v gs = ? 4 v, i d = ? 2.5 a D 0.24 0.28 drain-source on resistance r ds (on) v gs = ? 10 v, i d = ? 2.5 a D 0.16 0.19 ? forward transfer admittance |y fs | v ds = ? 10 v, i d = ? 2.5 a 2.0 4.0 D s input capacitance c iss D 630 D pf reverse transfer capacitance c rss D 95 D pf output capacitance c oss v db = ? 10 v, v gs = 0 v, f = 1 mhz D 290 D pf rise time t r D 25 D turn-on time t on D 45 D fall time t f D 55 D switching time turn-off time t off v in : t r , t f < 5 ns, duty 1%, t w = 10 s D 200 D s total gate charge (gate-source plus gate-drain) q g D 22 D nc gate-source charge q gs D 16 D nc gate-drain (?miller?) charge q gd v dd ? 48 v, v gs = ? 10 v, i d = ? 5 a D 6 D nc source-drain diode ratings and characteristics (ta = 25c) characteristics symbol test condition min typ. max unit continuous drain reverse current i dr D D D ? 5 a pulse drain reverse current i drp D D D ? 20 a diode forward voltage v dsf i dr = ? 5 a, v gs = 0 v D D 1.7 v reverse recovery time t rr D 80 D ns reverse recovery charge q rr i dr = ? 5 a, v gs = 0 v di dr /dt = 50 a/s D 0.1 D c marking ? 10 v 0 v v gs r l = 12 ? v dd ? 30 v i d = ? 2.5 a v out 4.7 ? product no. m p 6 4 0 4 lot code japan toshiba trademark country of origin lot number month (starting from alphabet a) year (last number of the christian era)
MP6404 2002-12-11 5 nch mos fet gate-source voltage v gs (v) i d ? v gs drain current i d (a) gate-source voltage v gs (v) v ds ? v gs drain-source voltage v ds (v) drain-source voltage v ds (v) i d ? v ds drain current i d (a) drain-source voltage v ds (v) i d ? v ds drain current i d (a) drain-source on resistance r ds (on) ( ? ) drain current i d (a) |y fs | ? i d forward transfer admittance |y fs | (s) drain current i d (a) r ds (on) ? i d common source tc = 25c 4 3 3.5 10 6 8 v gs = 2.5 v 4.5 0 4 8 12 16 20 0 4 8 12 16 20 0 0 common source tc = 25c 5 8 i d = 2.5 a 0 0.4 0.8 1.2 1.6 2.0 0 4 8 12 16 20 common source tc = 2 5 c 0.03 0.3 10 v gs = 4 v 0.5 1 3 5 10 0.05 0.1 0.3 0.5 0.3 0.5 100 25 tc = ? 55c common source v ds = 10 v 1 3 5 10 20 0.5 1 3 5 10 30 0 0 common source v ds = 10 v 100 25 tc = ? 55c 2 4 6 8 10 0 2 4 6 8 10 0 0 3.5 3 3.3 10 6 8 4 common source tc = 25c 1 2 3 4 5 0.4 0.8 1.2 1.6 2.0 v gs = 2.5 v
MP6404 2002-12-11 6 nch mos fet drain-source voltage v ds (v) capacitance ? v ds capacitance c (pf) case temperature tc (c) v th ? tc gate threshold voltage v th (v) case temperature tc (c) r ds (on) ? tc drain-source on resistance r ds(on) ( ? ) drain-source voltage v ds (v) i dr ? v ds drain reverse current i dr (a) gate-source voltage v gs (v) total gate charge q g (nc) dynamic input/output characteristics drain-source voltage v ds (v) 0 ? 80 v gs = 4 v common source 2.5, 1.3 2.5 1.3 i d = 4 a v gs = 10 v ? 40 0 40 80 120 160 0.3 0.1 0.2 0.4 4 0 ? 80 common source v ds = 10 v i d = 1 ma ? 40 0 40 80 120 160 0.5 1.0 1.5 2.0 2.5 common source v gs = 0 v f = 1 mhz tc = 25c 10 0.1 30 50 100 300 500 1000 3000 0.3 0.5 1 10 30 50 100 3 5 c iss c oss c rss common source i d = 5 ma tc = 25c 0 0 20 40 60 80 20 40 60 80 v dd = 48 v 12 v dd = 48 v v ds v gs 0 4 8 12 16 24 24 12 common source tc = 25c 0.1 0 ? 0.4 ? 0.8 ? 1.6 ? 2.0 ? 2.4 ? 1.2 0.3 0.5 1 3 5 10 20 v gs = 0, ? 1 v 10 3 1
MP6404 2002-12-11 7 pch mos fet gate-source voltage v gs (v) i d ? v gs drain current i d (a) gate-source voltage v gs (v) v ds ? v gs drain-source voltage v ds (v) drain-source voltage v ds (v) i d ? v ds drain current i d (a) drain-source voltage v ds (v) i d ? v ds drain current i d (a) drain current i d (a) |y fs | ? i d forward transfer admittance |y fs | (s) drain current i d (a) r ds (on) ? i d drain-source on resistance r ds (on) ( ? ) ? 10 0 0 common source v ds = ? 10 v 100 25 tc = ? 55c ? 2 ? 4 ? 6 ? 8 ? 2 ? 4 ? 6 ? 8 ? 10 0 0 common source tc = 25c ? 2 i d = ? 5 a ? 4 ? 3 ? 1 ? 0.4 ? 0.8 ? 1.2 ? 1.6 ? 2.0 ? 4 ? 8 ? 12 ? 16 ? 20 0.03 ? 0.1 v gs = ? 4 v ? 10 common source tc = 25c ? 0.3 ? 0.5 ? 1 ? 3 ? 10 ? 30 0.05 0.1 0.3 0.5 1 3 ? 5 0 0 common source tc = 25c ? 2 ? 4 ? 6 ? 8 ? 10 ? 2 ? 4 ? 6 ? 8 ? 10 ? 4 v gs = ? 2v ? 3 ? 3.5 ? 10 ? 6 ? 8 ? 2.5 0 0 ? 4 v gs = ? 2v ? 3 ? 3.5 ? 10 ? 6 ? 8 common source tc = 25c ? 2.5 ? 1 ? 2 ? 3 ? 4 ? 5 ? 0.4 ? 0.8 ? 1.2 ? 1.6 ? 2.0 ? 0.1 0.3 common source v ds = ? 10 v 100 25 tc = ? 55c ? 0.3 ? 0.5 ? 1 ? 3 ? 5 ? 10 ? 30 0.5 1 3 5 10 30
MP6404 2002-12-11 8 pch mos fet drain-source voltage v ds (v) capacitance ? v ds capacitance c (pf) case temperature tc (c) r ds (on) ? tc drain-source on resistance r ds (on) ( ? ) drain-source voltage v ds (v) i dr ? v ds drain reverse current i dr (a) gate-source voltage v gs (v) total gate charge q g (nc) dynamic input/output characteristics drain-source voltage v ds (v) case temperature tc (c) v th ? tc gate threshold voltage v th (v) 0 ? 80 i d = ? 5, ? 2.5, ? 1.2 a ? 2.5 ? 1.2 v gs = ? 4 v ? 40 0 40 80 120 160 0.2 0.4 0.6 0.8 1.0 common source i d = ? 5 a v gs = ? 10 v common source tc = 2 5 c ? 0.1 0 0.4 0.8 1.2 1.6 2.0 ? 0.3 ? 0.5 ? 1 ? 3 ? 5 ? 10 ? 30 v gs = 0, 1 v ? 10 ? 3 ? 1 0 ? 80 common source v ds = ? 10 v i d = ? 1 ma ? 40 0 40 80 120 160 ? 0.4 ? 0.8 ? 1.2 ? 1.6 ? 2.0 0 0 ? 10 ? 20 ? 30 ? 40 ? 50 8 16 24 32 40 0 ? 4 ? 8 ? 12 ? 16 ? 20 v dd = ? 48 v ? 12 ? 24 v ds v gs common source i d = ? 5 a tc = 2 5 c 30 ? 0.1 ? 0.3 ? 1 ? 3 ? 10 ? 30 ? 100 50 100 300 500 1000 3000 5000 common source v gs = 0 v f = 1mhz tc = 25c c iss c oss c rss
MP6404 2002-12-11 9 ambient temperature ta (c) p dt ? ta total power dissipation p dt (w) total power dissipation p dt (w) ? t ch ? p dt channel temperature increase ? t ch (c) (1) (2) (3) (4) 2 4 6 8 0 160 40 80 120 10 0 attached on a circuit board (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 6 devices operation circuit board (4) (3) (2) (1) 0 8 40 2 4 6 80 120 160 200 0 (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 6 devices operation attached on a circuit board circuit board 0.001 0.01 0.1 1 10 100 1000 0.1 curves should be applied in thermal limited area. (single nonrepetitive pulse) below figure show thermal resistance per 1 unit versus pulse width. -no heat sink and attached on a circuit board- (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 6 devices operation circuit board (1) (2) (3) (4) nch mos fet pch mos fet 0.3 1 3 10 30 100 300 r th ? t w pulse width t w (s) transient thermal resistance r th (c/w)
MP6404 2002-12-11 10 drain-source voltage v ds (v) safe operating area (be applicable to nch mos fet) drain current i d (a) drain-source voltage v ds (v) safe operating area (be applicable to pch mos fet) drain current i d (a) channel temperature t ch (c) e as ? t ch (be applicable to nch mos fet) avalanche energy e as (mj) channel temperature t ch (c) e as ? t ch (be applicable to pch mos fet) avalanche energy e as (mj) 0 25 100 200 300 400 500 50 75 100 125 150 0 25 40 80 120 160 200 50 75 100 125 150 ? 0.1 ? 1 *: single nonrepetitive pulse tc = 25c curves must be derated linearly with increase in temperature. ? 0.3 ? 1 ? 3 ? 10 ? 30 ? 3 ? 10 ? 30 ? 100 i d max 1 ms* 100 s* 10 ms* 10 s* 100 ms* 0.1 1 *: single nonrepetitive pulse tc = 25c curves must be derated linearly with increase in temperature. 0.3 1 3 10 30 3 10 30 100 i d max 1 ms* 100 s* 10 ms* 10 s* 100 ms* test circuit test wave form i ar b vdss v dd v ds peak i ar = 5 a, r g = 25 ? v dd = 25 v, l = 7 mh ? 15 v 15 v dd vdss vdss 2 as v b b li 2 1 test circuit test wave form i ar b vdss v dd v ds peak i ar = ? 5 a, r g = 25 ? v dd = ? 25 v, l = 14.84 mh ? 15 v 15 v dd vdss vdss 2 as v b b li 2 1
MP6404 2002-12-11 11 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use

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